个人简历
教育背景 2007.09－2013.12 电子科技大学，微电子学专业，博士学位 2003.09－2007.06 电子科技大学，集成电路设计与集成系统专业，学士学位 工作履历 2014.01－至今 电子科技大学，微电子与固体电子学院，讲师 研究领域
主要研究新型电力电子技术，包括功率高压半导体器件、智能功率集成电路、新材料功率器件，微电子半导体器件工艺与原理等。近期论文
1、junji cheng, xingbi chen. a practical approach to enhance yield of optvld products[j]. ieee electron device lett., feb. 2013, 34(2): 289-291 2、junji cheng, xingbi chen. a new planar junction edge termination technique using optvld with a buried layer[j]. ieee trans. on electron devices, july 2013, 60(7): 2428-2431 3、junji cheng, xingbi chen. hot-carrier reliability in optvld-ldmos[j]. journal of semiconductors, 2012, 33(6): 064003 4、junji cheng, xingbi chen. low specific on-resistance p-type optvld ldmos with double hole-conductive paths for spic application[c]. ieee ispsd, bruges, 2012, late news paper, 225-228 5、junji cheng, xingbi chen. a novel low-side structure for optvld-spic technologically compatible with bicmos[c]. ieee ispsd, japan, 2013, 123-126 6、ping li; xinjiang lyu; junji cheng; xingbi chen. a low on-state voltage and saturation current tigbt with self-biased pmos.ieee electron device letters. year: 2016, volume: 37, issue: 11, pages: 1470 – 1472. 7、bo yi; junji cheng; xing bi chen. a high-voltage “quasi-p-ldmos” using electrons as carriers in drift region applied for spic. ieee transactions on power electronics. year: 2017, volume: pp, issue: 99. pages: 1 – 1. 8、lixiao liang; xinjiang lyu; junji cheng; xing bi chen. multilevel low-voltage power supplies capable of integrating with high-voltage devices. ieee transactions on electron devices. year: 2017, volume: 64, issue: 8. pages: 3269 – 3274. 9、ping li; junji cheng; xingbi chen. a low on-state voltage and saturation current tigbt with integrated zener diode.ieee electronics letters. year: 2017, volume: pp, issue: 99. 10、deng,jing; cheng, junji; chen, xingbi.an improved soi p-channel ldmos with high-k gate dielectric and dual hole-conductive paths.ieee electronics device letters, 2017 11、deng,jing; huang, mingmin; cheng, junji; lyu, xinjiang; chen, xingbi. a new low specific on-resistance hk-ldmos with n-poly diode. superlattices and microstructures, v 101, p 180-190, january 1, 2017
